? semiconductor components industries, llc, 2015 january, 2015 ? rev. 4 1 publication order number: NTD5862N/d NTD5862N, ntp5862n n-channel power mosfet 60 v, 98 a, 5.7 m features ? low r ds(on) ? high current capability ? 100% avalanche tested ? these devices are pb?free, halogen free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 60 v gate?to?source voltage ? continuous v gs 20 v gate?to?source v oltage ? non?repetitive (t p < 10 s) v gs 30 v continuous drain current (r jc ) (note 1) stead y state t c = 25 c i d 98 a t c = 100 c 69 power dissipation (r jc ) t c = 25 c p d 115 w pulsed drain current t p = 10 s i dm 335 a operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s 96 a single pulse drain?to?source avalanche energy (l = 0.3 mh) e as 205 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) r jc 1.3 c/w junction?to?ambient ? steady state (note 2) r ja 37 1. limited by package to 50 a continuous. 2. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces. dpak case 369c style 2 marking diagrams & pin assignment 60 v r ds(on) max i d max v (br)dss 5.7 m @ 10 v www. onsemi.com 1 2 3 4 see detailed ordering and shipping information on page 5 o f this data sheet. ordering information 1 gate 2 drain 3 source 4 drain ayww 58 62ng a = assembly location* y = year ww = work week 5862n = device code g = pb?free package g s n?channel d ipak case 369d style 2 1 2 3 4 4 drain 2 drain 1 gate 3 source ayww 58 62ng 98 a ntp 5862ng ayww 1 gate 3 sour ce 4 drain 2 drain 1 2 3 4 to?220 case 221a style 5 * the assembly location code (a) is front side optional. in cases where the assembly location is stamped in the package, the front side assembly code may be blank.
NTD5862N, ntp5862n www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 47 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 150 c 100 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2.0 4.0 v threshold temperature coefficient v gs(th) /t j ?9.7 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 45 a 4.4 5.7 m forward transconductance gfs v ds = 15 v, i d = 10 a 18 s charges, capacitances and gate resistances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 5050 6000 pf output capacitance c oss 500 600 reverse transfer capacitance c rss 300 420 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 45 a 82 nc threshold gate charge q g(th) 5.2 gate?to?source charge q gs 24 gate?to?drain charge q gd 27 gate resistance r g 0.6 switching characteristics (note 4) turn?on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 45 a, r g = 2.5 18 ns rise time t r 70 turn?off delay time t d(off) 35 fall time t f 60 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 45 a t j = 25 c 0.9 1.2 v t j = 100 c 0.75 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 45 a 38 ns charge time ta 20 discharge time tb 18 reverse recovery charge q rr 40 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTD5862N, ntp5862n www. onsemi.com 3 typical characteristics 0 40 80 120 160 200 012345 figure 1. on?region characteristics v ds , drain?to?source voltage (v) i d , drain current (a) 6.0 v v gs = 10 v 5.8 v 5.6 v 5.2 v t j = 25 c 0 20 40 60 80 100 120 140 160 34567 v ds 5 v t j = 25 c t j = ?55 c t j = 125 c figure 2. transfer characteristics v gs , gate?t o?source voltage (v) i d , drain current (a) 0.010 0.015 0.020 0.025 0.030 0.000 0.005 45678910 figure 3. on?resistance vs. gate voltage v gs , gate?t o?source voltage (v) r ds(on) , drain?to?source resistance ( ) i d = 45 a t j = 25 c 0.003 0.004 0.005 0.006 10 20 30 40 50 60 70 80 figure 4. on?resistance vs. drain current i d , drain current (a) r ds(on) , drain?to?source resistance ( ) v gs = 10 v t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.2 ?50 ?25 0 25 50 75 100 125 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain?to?source resistance (normalized) v gs = 10 v i d = 45 a 1000 10000 100000 10 20 30 40 50 60 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (v) i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v 6.2 v 180 200 90 100 2.0 175
NTD5862N, ntp5862n www. onsemi.com 4 typical characteristics 0 1000 2000 3000 4000 5000 6000 0 102030405060 figure 7. capacitance variation v ds , drain?to?source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 0 2 4 6 8 10 01020304050 q gs q t q gd figure 8. gate?to?source vs. total charge q g , total gate charge (nc) v gs , gate?t o?source voltage (v) v ds = 48 v i d = 45 a t j = 25 c 1 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = 48 v i d = 45 a v gs = 10 v t d(off) t d(on) t r t f 0 20 40 60 80 100 0.50 0.60 0.70 0.80 1.00 0.90 1.1 0 figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (v) i s , source current (a) t j = 25 c v gs = 0 v 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain?to?source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 10 s 100 s 10 ms dc 1 ms 0 25 50 75 100 125 150 175 25 50 75 100 125 17 5 avalanche energy (mj) t j , starting junction temperature figure 12. maximum avalanche energy versus starting junction temperature i d = 37 a 60 70 80 9 0 1 3 5 7 9 150 200 225
NTD5862N, ntp5862n www. onsemi.com 5 typical characteristics 0.001 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 figure 13. thermal response t, pulse time (s) r jc(t) ( c/w) effective transient thermal resistance 0.02 0.2 0.01 0.05 duty cycle = 0.5 single pulse 0.1 10 0.01 ordering information order number package shipping ? NTD5862N?1g ipak (straight lead) (pb?free) 75 units / rail NTD5862Nt4g dpak (pb?free) 2500 / tape & reel ntp5862ng to?220 (pb?free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTD5862N, ntp5862n www. onsemi.com 6 package dimensions to?220 case 221a?09 issue ah style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c style 2: pin 1. gate 2. drain 3. source 4. drain
NTD5862N, ntp5862n www. onsemi.com 7 package dimensions dpak (single gauge) case 369c issue e b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate construction note 7 style 2: pin 1. gate 2. drain 3. source 4. drain on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTD5862N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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